Features
Programming power voltage (VPP):
2.5 V
Refresh row cycle time:
350 ns
Module configuration:
8192M x 72
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
19
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
2666 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 64 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
64 GB
Buffered memory type:
Registered (buffered)
Logistics data
Harmonized System (HS) code:
84733020
Operational conditions
Storage temperature (T-T):The minimum and maximum temperatures at which the product can be safely stored.
-55 - 100 °C
Operating temperature (T-T):The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C
Sustainability
Sustainability certificates:
RoHS
Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
18.8 mm
Width:The measurement or extent of something from side to side.
133.3 mm