Quick Code: Q MPN: M393B2G70DB0-YK0
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Overview


Boost your PC’s performance to new levels.
You need the right expert for the right PC memory solution.
Samsung is a leader in the DRAM market, with our DRAM being selected by most OEMs for many years.
Embrace the cutting-edge Samsung DDR4 to take your PC to a new dimension of high speed and low energy performance.

Improved bandwidth for high-end applications.
With PC applications becoming more critical and complex, personal computing has set its toughest demands yet. PCs today need to provide exceptional speed to deliver the performance required.

Samsung 2xnm DDR4 UDIMM and SODIMM enable initial bandwidth of 2,400 Mbps, which can achieve up to the JEDEC-defined 3,200 Mbps. DDR4 has 2 times higher bandwidth than DDR3.

Complete multi-tasking with less energy.
Consumers want to be able to rely on excellent battery power to complete their tasks. Samsung PC DRAM provides longer time unplugged through lower power consumption. This enables extended battery life for notebooks while maintaining high performance.

Samsung DDR4 SODIMM and UDIMM consume less power with their unique 2xnm technology. Samsung’s 2xnm DDR4 operating at 1.2V achieves approximately 26% higher performance/watt compared to 2xnm DDR3 operating at 1.5V.

Samsung also provides 2xnm LPDDR4 operating at 1.1V, achieving 37% increase in power efficiency than 2xnm LPDDR3 operating at 1.2V.

Double your capacity with the world’s 1st 8Gb chips.
The advancement in density has enabled Samsung to offer bigger capacity DRAM, delivering the faster data transmission speed that devices require today. PCs can benefit from high density DRAM by using fewer DRAM components, which leads to space saving.

Samsung DDR4 UDIMM can achieve the max capacity of 128GB using the world’s 1st 8Gb chips, which is 2 times bigger than that of DDR3’s 64GB made of 4Gb chips.




Specification

Technical Description:

Features
Refresh row cycle time:
11 ns
Row cycle time:
11 ns
Module configuration:
2048M x 72
Memory voltage:The voltage (V) of the memory in the device.
1.35 V
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
11
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Yes
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
240-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
1600 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR3
Memory layout (modules x size):
1 x 16 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
16 GB
Buffered memory type:
Registered (buffered)

Logistics data
Harmonized System (HS) code:
84733020

Operational conditions
Operating temperature (T-T):The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C

Technical details
Compliance certificates:
RoHS

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
30 mm
Depth:The distance from the front to the back of something.
4 mm
Width:The measurement or extent of something from side to side.
133.3 mm

Product details

M393B2G70DB0-YK0 Samsung

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SKU: M393B2G70DB0-YK0