Features
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
16
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
2400 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 4 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
4 GB
Logistics data
Harmonized System (HS) code:
84733020
