Quick Code: Q MPN: TLZRD464G3600HC18JDC01
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Overview


Reinforced structure and enhanced heat dissipation
Designed for complete protection and enhanced heat dissipation, the heat spreader is formed by punch press process with a 0.8mm thick, one-piece alloy aluminum to reinforce the body structure. In addition, the electrolytic anodizing process can enhance corrosion resistance and make it non-conductive. Moreover, the superconductive thermal adhesive can maintain gaming memory within operating temperatures.

Selected IC chips. Stable and durable
The DDR4 gaming memory is made and selected through a rigorous testing process for complete compatibility and stability. This offers gamers a DDR4 memory with excellent quality, stability and compatibility.

High performance, low power consumption and upgrade easily
In addition to the increase in data transfer rate, the basic working voltage of the new generation of DDR4 memory is also decreased to 1.2V. This desktop memory is energy saving, high performance and low power consumption.

Supports Intel XMP and auto overclocking
T-FORCE VULCAN Z DDR4 Gaming Memory is plug and plays ready. Overclocking can be super easy without the hassle of manually adjusting the BIOS. It is compatible with both Intel & AMD platform, therefore gamers can easily enjoy overclocking without worries.




At-a-glance


  • Energy saving with ultra-low working voltage

  • High thermal conductive adhesive

  • Selected high-quality IC

  • Simple design to perfectly protect the cooling module

  • Supports Intel & AMD motherboards

  • Supports XMP2.0




Reasons to buy

  • Energy saving with ultra-low working voltage
  • High thermal conductive adhesive
  • Selected high-quality IC
  • Simple design to perfectly protect the cooling module
  • Supports Intel & AMD motherboards
  • Supports XMP2.0

Specification

Technical Description:

Features
Backlight:Product has a built-in light source for its illuminating.
No
Intel Extreme Memory Profile (XMP) version:
2.0
Intel Extreme Memory Profile (XMP):
Yes
Memory voltage:The voltage (V) of the memory in the device.
1.35 V
Memory channels:
Dual-channel
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
18
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
3600 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
2 x 32 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
64 GB
Buffered memory type:
Unregistered (unbuffered)

Logistics data
Harmonized System (HS) code:
84733020

Packaging data
Package type:The type of product package e.g. box.
Blister

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
32 mm
Depth:The distance from the front to the back of something.
140 mm
Width:The measurement or extent of something from side to side.
7 mm

Product details

TLZRD464G3600HC18JDC01 Team

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SKU: TLZRD464G3600HC18JDC01